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| inchange semiconductor product specification silicon npn power transistors 2SD1175 description ? with to-3 package ? built-in damper diode ? high voltage ,high power dissipation ? wide area of safe operation applications ? line-operated horizontal deflection output applications pinning(see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 1500 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a p t total power dissipation t c =25 ?? 100 w t j junction temperature 150 ?? t stg storage temperature -65~150 ?? fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2SD1175 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =500ma; i c =0; 5 v v cesat collector-emitter saturation voltage i c =4.0 a;i b =0.8 a 5.0 v v besat base-emitter saturation voltage i c =4.0 a;i b =0.8 a 1.5 v v cb =750v;i e =0 50 | a i cbo collector cut-off current v cb =1500v;i e =0 1.0 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 30 h fe-2 dc current gain i c =4a ; v ce =10v 5 v f diode forward voltage i f =4a 2.5 v inchange semiconductor product specification 3 silicon npn power transistors 2SD1175 package outline fig.2 outline dimensions |
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